IRF130 Datasheet, PDF (1/3 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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IRF130
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
Product Summary
Part Number BVDSS RDS(on) ID
IRF130
100V 0.1 8fl 14A
Features:
• Repetitive Avalanche Ratings
• Dynamic dv/dt Rating
• Hermetically Sealed
• Simple Drive Requirements
• Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS =ov, TC = 25°c
ID @ VGS = ov, TC = ioo°c
IDM
PD @ TC = 25°c
VGS
EAS
IAR
EAR
dv/dt
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current CD
Max, Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy @
Avalanche Current (D
Repetitive Avalanche EnergyCD
Peak Diode Recovery dv/dt (D
Tj
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
14
9.0
A
56
75
W
0.60
w/°c
±20
V
75
mJ
14
A
7.5
ml
5.5
V/ns
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10s)
1 1.5(typical)
g
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