IRF120 Datasheet, PDF (1/3 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

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Description
These devices are n-channel, enhancement mode, power
MOSFETs designed especially for high speed applications,
such as switching power supplies, converters, AC and DC
motor controls, relay and solenoid drivers and other pulse
circuits.
Low RDs<on)
VQS Rated at ±20 V
Silicon Gate for Fast Switching Speeds
bss. Vos(on), Specified at Elevated Temperature
Rugged
Low Drive Requirements
Ease of Paralleling
Product Summary
Part Number
IRF120
IRF121
IRF122
IRF123
IRF520
IRF521
IRF522
IRF523
MTP10N08
MTP10N10
VDSS
100 V
60 V
100 V
60 V
100 V
60 V
100 V
60 V
80 V
100 V
RoS(on)
0.30 n
0.30 n
0.40 n
0.40 n
0.30 n
0.30 n
o.4o n
0.40 Ji
0.33 fi
0.33 n
Notes
For information concerning connection diagram and package outline, refer to
Section 7.
IRF120-123/IRF520-523
MTP10N08/10N10
N-Channel Power MOSFETs,
11 A, 60-100 V
Power And Discrete Division
TO-204AA
TO-220AB
IRF120
IRF121
IRF122
IRF123
ID at
Tc = 25°C
8.0 A
8.0 A
7.0 A
7.0 A
8.0 A
8.0 A
7.0 A
7.0 A
10 A
10 A
IRF520
IRF521
IRF522
IRF523
MTP10N08
MTP10N10
ID at
Tc = 100-C
5.0 A
5.0 A
4.0 A
4.0 A
5.0 A
5.0 A
4.0 A
4.0 A
6.4 A
6.4 A
Case Style
TO-204AA
TO-220AB
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