IR413 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – High -voltage NPN silicon transistors designed for medium-to-high- voltage inverters

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
I R 413 (SILICON)
, One..
TELEPHONE: [phone]
[phone]
FAX: [phone]
High -voltage NPN silicon transistors designed
TO-3 for medium-to-high-voltage inverters, converters, reg-
ulators and switching circuits.
Colltctor connected to CMC
I PIN I BASE
1COIMCTM
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter- Base Voltage
Collector Current — Continuous
Base Current
Total Device Dissipation 9 T_ - 25"C
Derate above 25*C
Operation Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
Symbol
VCEX
VCB
s^VEB
'B
PD
TJ
Ts*
400
400"
10
2.0
125
1. 1
-65 to +150
-65 to +200
Characteristic
Symbol
Max
Thermal Resistance, Junction to Case
ejc
1.0
ELECTRICAL CHARACTERISTICS <TC = 25'cuni.iio»t™iitnot«»
Characteristic
Symbol
Min
Unit
Vdc
Vdc
Vdc
Adc
Ada
watts
w/-c
•c
"C
Unit
°c/w
Max Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage I"
(Ic » 100 mAdc, IB =. 0)
Collector Cutoff Current
(VCE.400Vdc. VKB(of|).1.5Vdc,
TC - 125"C)
Emitter Cutoff Current
(VBE . 5. 0 Vdc, Ic = 0)
BVCEO(sus)
!CEX
325
—
Vdc
— _mAdc
0.25
- 0.5 mAdc
'EBO
-
mAdc
5.0
ON CHARACTERISTICS
DC Current Gain-Ill
(Ic = 0. 5 Adc, VCE =. 5. 0 Vdc)
(Ic = 1.0 Adc, V C E > 5.0 Vdc)
Collector-Emitter Saturation Voltage ni
(Ic . 0. 5 Adc, Ig . 0. 05 Adc)
Base-Emitter Saturation Voltage I'l
(Ic > 0. 5 Adc, 1B - 0. 05 Adc)
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(Ic =. 200 mAdc, VCE - lOVdc,
f . 1. 0MHz)
II) PW (* 300 MS, Duty Cycle 4 2. <fa
BF8
VCE(sat)
VBE(sat)
<r
20
80
15
—
Vdc
-
0.8
Vdc
1.25
—
MHz
2.5
-
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