IFN860 Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – Dual N-Channel Silicon Junction Field-Effect Transistor

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20
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
TELEPHONE: [phone]
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FAX: [phone]
IFN860
Dual N-Channel Silicon Junction Field-Effect Transistor
Low-Noise Audio Amplifier
Equivalent to Crystalonics
CD860
Absolute maximum ratings at TA = 25°C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
- 20 V
50 mA
400 mW
2.3 rnWfC
- 65°C to 200"C
At 25CC free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Leakage Voltage
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Differential Gate Source Voltage
Dynamic Electrical Characteristics
Transconductance
Common Source Input Capacitance
Common Source Reverse Transfer
Capacitance
Equivalent Short Circuit
Input Noise Voltage
IFN860
Mm Typ Max
V(BR)GSS
-20
IGSS
3
VGS(OFF)
-0.3
-3
'DSS
10
IVGS1~ VGS2
25
Process NJ450L
Unit
Test Conditions
V IG =- 1 uA, VDS = 0v
nA VGS = -10V, VDS = 0V
V VDS = 10V, lD = 100uA
mA VDS = 10V, VGS = 0V
mV VDS = 10V, ! D = 1 0 0 u A
9m
25
40
mS VDS = 10V, lD = -10mA
f = 1 kHz
Hss
30
35
PF ^{VDS = 10V, ID = - 10 mA}
f = 1 MHz
Crss
17
20
PF VDS = 10V, iD = - 1 0 m A
f = 1 MHz
GN
2 nV/\Hz V D G - 3 V , ID = 10mA
f = 1 kHz
TO71
SEATING PLANE
OJ6jQ,
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(DIM A)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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