GT43 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlington Power Transistor

/
, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Darlington Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
GT43
DESCRIPTION
: V(BR)CEo= 300V(Min)
• High DC Current Gain
: hFE= 2000(Min.)@ lc= 4A
* Low Collector Saturation Voltage
: VCE(satr 3.0V(Max.)@ lc= 6A
APPLICATIONS
• Switching for dynamotor excitation
• General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
400
V
VCEO Collector-Emitter Voltage
300
V
VEBO Emitter-Base Voltage
7
V
Ic
Collector Current-Continuous
10
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
f_<f_Sh_J T1~C—"_£7_-^_J'P _\-
Tj
Junction Temperature
1
A
100
W
150
°C
Tstg
Storage Temperature Range
-55-150 r
11!
•HC^
' ₂₃
PIN 1 BASE
2. COLLECTOR
3. EMITTER
TO-3PN package
— B—•- -»
'
,^-'*™"F
1
'
i _H:
\;
^- ^» ,
o --<-
-H
-•-R
mm
DIM MIN MAX
A 19.90 20.10
Q _{15 50 15 70}
C 4.70 4.90
D 0.90 1.10
F 1.90 2.10
F 3.40 3.60
G 2.90 3.10
H 3.20 3.40
J 0.595 0.605
K 20.50 20,70
L 1.90 2.10
N 10.89 10.91
q 4.90 5.10
R 3.35 3.45
S 1.995 2.005
U 5.90 6.10
Y | 9.90 10.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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