FTSO5771 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – PNP Ultra High Speed Saturated Logic Switch

^Ss-mi-donaudtoi U^ioaucti, Due.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
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2N5771/FTSO5771
PNP Ultra High Speed Saturated
Logic Switch
• VCEO ... 15 V (Mln)
• ton ... 15ns (Max) @ 10 mA, ton...20 ns (Max) @ 10 mA
• T. ,.. 20 ns (Max) @ 10 mA
• Complements ... 2N5769, 2N5772
ABSOLUTE MAXIMUM RATINGS (Note 1)
Temperatures
Storage Temperature
-55°C to 150° C
Operating Junction Temperature
150°C
Power Dissipation (Notes 2 & 3)
Total Dissipation at
25° C Ambient Temperature
25° C Case Temperature
2N
0.625 W
1.0 W
FTSO
0,350 W*
Voltages & Currents
VOEO Collector to Emitter Voltage
(Note 4)
Vcao Collector to Base Voltage
VEBO Emitter to Base Voltage
Ic Collector Current
-15V
-15V
-4.5 V
50 mA
PACKAGE
2N5771
FTSO5771
TO-92
TO-236AA/AB
ELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL CHARACTERISTIC
MIN MAX
BVcEo
Collector to Emitter Breakdown Voltage -15
(Note 5)
UNITS
TEST CONDITIONS
V Ic = 3.0 mA, IB = 0
BVCES Collector to Emitter Breakdown Voltage -15
V
lo = 100^A, VBE = 0
BVceo Collector to Base Breakdown Voltage -15
V
lc=100/A le =0
BVeao Emitter to Base Breakdown Voltage -4.5
V
lE = 100/iA, lc = 0
ICBO
Collector to Base Cutoff Current
10
nA VCB = -8.0 V, lc = 0
I EGO
Emitter Cutoff Current
1.0
/.A VEB = -4.5 V, lo = 0
ICES
Collector Reverse Current
10
nA VCE. = -8.0 V. VBE = O
5.0
f<A VCE = -8.0 V, VBE = 0, TA= 125°C
hfE
DC Current Gain (Note 5)
35
50 120
40
20
lo = 1.0mA, VCE = -0.5 V
lc = 10mA, VCE = -0.3 V
lo = 50mA, VCE = -1.0V
lo = 10 mA, VCE = -0.3 V, TA = 55° C
NOTES:
1- These ratings are limiting values above which the serviceability of any individual semiconductor device may be Impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings give a maximum junction temperature of 1SO°C and (TO-92) junction-to-case thermal resistance of 125°C/W (derating factor of 6.0
mW/°C): Juncn'on-lo-ambtent thermal resistance of 200° C/W (derating factor of 5.0 mVWC); (TO-236) junction-to-ambient thermal resistance of
357°CAW (derating factor of 2.8 mW/° C).
4. Rating refers to a high current point where collector to emitter voltage is lowest
5. Pulse conditions: length = 300 /is; duty cycle = 1%.
6. For product family characteristic curves, refer to Curve Set T292.
' Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed.to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
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