FE3A Datasheet, PDF (1/3 Pages) General Semiconductor – GLASS PASSIVATED FAST EFFICIENT RECTIFIER

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Ultra Fast Sinterglass Diode
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FAX: [phone]
FE3A to FE3D
Features
• High temperature metallurgically bonded con-
struction
• Cavity-free glass passivated junction
• Superfast recovery time for high efficiency
• Low forward voltage, high current capability
• Hermetically sealed package
• Low leakage current
• High surge current capability
Mechanical Data
Case: Sintered glass case, G4
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Parts Table
Part
FE3A
FE3B
FE3C
FE3D
VRRM = 50 V
VRRM-100V
VRRM = 150V
VRRM = 200V
Type differentiation
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 1040 rng
Package
G4
G4
G4
G4
Absolute Maximum Ratings
Tamb =25 C. unless otherwise specified
Parameter
Reverse voltage = Repetitive peakreverse
voltage
Test condition
see electrical characteristics
see electricalcharacteristics
see electrical characteristics
see electrical characteristics
Maximum averageforward rectified current
Peak forward surge current
Operating junction and storage temperature
range
0. 375 " (9. 5 mm j lead length at T;,mt, = 75 C
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method)
Part
FE3A
FE3B
FE3C
FE3D
Symbol Vaiue Unit
VR =
50
V
VRRM
VR =
100
V
VRRM
VR =
150
V
VRRM
VR = ²⁰⁰
V
VRRM
IpiAV)
3.0
A
'FSM
125
A
Tj. ^{- 5 5 t o +}
C
TSTG
175
Quality Semi-Conductors