DPAD Datasheet, PDF (1/2 Pages) Linear Integrated Systems – MONOLITHIC DUAL PICO AMPERE DIODES

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Dnc.
FEATURES
Direct Replacement For SILICONIX DPAD SERIES
HIGH ON ISOLATION
20fA
EXCELLENT CAPACITANCE MATCHING
ACR<0.2pF
ABSOLUTE MAXIMUM RATINGS1
@ 25°C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55°Cto+150°C
Operating Junction Temperature
-55°Cto+150°C
Maximum Power Dissipation
Continuous Power Dissipation (DPAD)3
500mW
Maximum Currents
Forward Current (DPAD)
50mA
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DPAD SERIES
MONOLITHIC DUAL
PICO AMPERE DIODES
DPAD
TO-72
Top View
C2
DPAD1
TO-78
Top View
Case & Substrate
C2 x-"^^ A1
* Case and Pin 4 must be floating on
all TO-78 case devices
COMMON ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN. TYP. MAX. UNITS
DPAD1
-45
BVR
Reverse Breakdown
Voltage
DPAD2,5,10,20,50,100 -45
SSTDPAD5,50,100 -30
VF
Forward Voltage
0.8 1.5
Differential Capacitance
DPAD1
0.2
CRI-CR2\S (ACR)
ALL OTHERS
0.5
DPAD1
0.8 PF
Total Reverse Capacitance DPAD2,5,10,20,50, 100
2.0
SSTDPAD5,50,100
4.0
CONDITIONS
lR=-1uA
IF= 1mA
VR = -5V, MMHz
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL CHARACTERISTIC
DPAD2
SSTDPAD2
(SST)DPADI
-1
(SST)DPAD2
-2
(SST)DPADS
-5
-5
IR
Maximum Reverse
Leakage Current2
(SST)DPADIO
-10
(SST)DPAD20
-20
(SST)DPAD50
-50
-50
(SST)DPADIOO
-100
-100
UNITS CONDITIONS
PA
VR = -20V
Quality Semi-Conductors