D45H Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
i, One.
Silicon PNP Power Transistors
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D45H Series
DESCRIPTION
• Low Saturation Voltage
• Fast Switching Speeds
• Complement to Type D44H Series
APPLICATIONS
• Designed for general pourpose power amplification and
switching such as output or driver stages in applications
such as switching regulators.converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE UNIT
VCEO
Collector-Emitter
Voltage
D45H8
-60
V
D45H10.11 -80
VEBO ^{Emitter-Base Voltage}
-5
V
Ic
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@TC=25'C
T]
Junction Temperature
Tstg
Storage Temperature Range
-20
A
-50
W
150 •c
-55-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R(h j-c ^{Thermal Resistance, Junction to Case}
2.5 r/w
Rth j-a ^{Thermal Resistance, Junction to Ambient 75 "CM/}
,^
2
13
PIN 1.BASE
2. COLLECTOR
3.BWITTER
12 3
TO-220C package
W- - B v\
^ert ^{f~~v~*l S-}
I'ToJ
A" '
e
i i JdOC1^
i ^IJ^FFT•"
-4(*S
~~ s^{^}oft
soi-,
•*
1,
tj
_^c^__
mm
DIM WIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 ^1.30
Q 2.70 2.90
R ^{2.50 2.70}
S 1.29 1.31
U 6.45 6.65
V 8.66 8.86
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to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
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