D40K Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON DARLINGTON POWER TRANSISTOR

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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D40K SERIES
NPN SILICON DARLINGTON
POWER TRANSISTOR
i^M?7
TO-202 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCEO
VCES
VEBO
ic
"CM
IB
PD
PD
Tj, Tstg
©JA
0jC
D40K1. 3
D40K2. 4
30
so
so
so
13
2.0
3.o
0.2
167
10
-65 to +150
75
12.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
CES
VCE=Rated VCE
EBO
VEB=13V
BVCEO
lc=10mA(D40K1,3)
30
BVCEO
lc=10mA(D40K2, 4)
50
VCE(SAT) IC=1 -5A' lB=3.0mA (D40K1 , 2)
VCE(SAT) lc=1-OA. !E ^{=2.0mA (D40K3, 4)}
VBE(SAT) !C=1 5A< !E ^{=3.0mA(D40K1, 2)}
VBE(SAT) |C=I-°A'|E ^{=2.0mA(D40K3, 4)}
hFE
VCE=5.0V, lc=200mA
10K
hFE
VCE=5.0V, IC=1.5A(D40K1, 2)
1K
hFE
VCE=5.0V, IC=1.0A(D40K3, 4)
1K
ccb
VCB=10V, f=1.0MHz
fT
VCE=5.0V, lc=20mA
75
MAX
500
100
1.5
1.5
2.5
2.5
10
UNITS
V
V
V
A
A
A
W
W
c
°c/w
°c/w
UNITS
nA
nA
V
V
V
V
V
V
pf
MHz
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