D29E Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon Transistors

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon
Transistors
TELEPHONE: [phone]
029E9-10
D33D29-30
D29E9J1-10J1 D33D29J1-30J1
The PNP D29E9-10 series and the NPN D33D29-30 series are silicon,
planar, passivated, epitaxial transistors intended for general purpose appli-
cations. These complementary pairs are especially suited for the drive stage
in high power amplifiers, and for control and television circuitry.
FEATURES: • Low Collector Saturation Voltage • Excellent Beta Linearity
over a Wide Current Range • Heatsinking Available on All Units
NOTE: Observe proper polarity on biases for PNP's and NPN's.
absolute maximum ratings: (25°C) (unless otherwise specified)
Voltages
Collector to Emitter
Emmitter to Base
Collector to Base
Collector to Emitter
VCEO
VEBO
VCBO
VCKS
60
Volts
5
Volts
70
Volts
70
Volts
Current
Collector (Continuous)
Ic
Collector (Pulsed, 300 Msec.,
pulse width,-2% duty cycle) ICM
750
1000
Dissipation
Total Power (Free Air,
T,^25°C)*
PT
Total Power with Jl Heatsink
(Free Air, TA - 25°C) **
PT
Total Power with Jl Heatsink
(Case Temp., Tc - 25°C) *** PT
500
700
1000
Temperature
Storage
-65 to +150
Operating
-65 to +150
Lead soldering (Yi«" ± %a"
from case for 10 sec. max.)
TL
+ 260
*Derate 4.0 mW/°C increase in ambient temperature above 25°C. **Derate 5.6 mW/°C increase
in ambient temperature above 25°C. ***Derate 8.0 mW/°C increase in case temperature above 25"C.
electrical characteristics: (25°C) (unless otherwise specified)
NOTE: Characteristics apply to both heatsinked and non-heatsinked devices.
STATIC CHARACTERISTICS
Min.
Collector Cutoff Current (vco = 25V)
(Vc» = 25V, Ti = 100°C)
Forward Current Transfer Ratio
ICES
ICES
(Io = 2mA,Vca = 2V)
D29E9/D33D29
hn
GO
D29E10/D33D30
h™
100
(Ic = 500mA, VCE = 2V)
D29E9/D33D29
'*kn
20
D29E10/D33D30
**hPB
25
Collector Emitter Breakdown Voltage
do = 10mA)
(Ic = 10 fiA)
**V(BR>CEO
60
V<BH>CES
70
Emitter Base Breakdown Voltage
(II = 10^«A)
Collector Saturation Voltage
do = 500 mA, IB = 50 mA)
Base Saturation Voltage
do = 500 mA, IB = 50 mA)
V<BR)EBO
** VCB<SAT>
** VBE,S4T,
DYNAMIC CHARACTERISTICS
Output Capacitance, Common Base
(VcB = 10V,f = 1MHZ)
Ccb
Input Capacitance, Common Base
(ViB = 0.5V, f = 1MHz)
C.6
Gain Bandwidth Product
do = 50 mA, VCE = 2V, f = 20 MHz)
D29E9/D33D29
ft
80
D29E10/D33D30
ft
120
"Pulse Conditions: Pulse width < 300/Js Duty cycle <2%
Max.
100
15
120
200
0.75
1.2
15
55
nA
."A
Volts
Volts
Volts
Volts
Volts
PF
PP
MHz