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CLD156R Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – Large Active Area Silicon Planar photodiode | |||
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CLD156
Large Active Area
Silicon Planar photodiode
This product is tested to satisfy the
conditions of both the CLD156 and
the CLD156R.
0.365 (9.27)
0.355 (9.02)
0.186 (4.72)
0.164 (4.17)
® Clairex
Technologies, Inc.
May, 2001
1.000 (25.4) min
0.030 (0.76) nom
0.200 (5.08)
0.330 (8.38)
0.320 (8.13)
CATHODE (long lead)
ALL DIMENSIONS ARE IN INCHES (CMIaLsLIeM1ET2ERS)
features
⢠100° acceptance angle
⢠860nm peak response
⢠TO-5 hermetic package
⢠usable for visible through near-IR
⢠RoHS compliant
absolute maximum ratings (TA = 25°C unless otherwise stated)
storage temperature........................................................................-65°C to +150°C
operating temperature.....................................................................-65°C to +150°C
lead soldering temperature(1) .............................................................................260°
reverse voltage ...................................................................................................30V
continuous power dissipation(2) .....................................................................200mW
description
The CLD156 and CLD156R are
0.122" x 0.222" active area silicon
notes:
1. 0.06â (1.5mm) from the header for 5 seconds maximum.
2. Derate linearly 1.28mW/°C free air temperature to TA = +150°C.
photodiodes featuring high linearity
and low dark current. The TO-5
header provides thermal
environment for reliable operation
over a wide temperature range. Wide
acceptance angle permits use in IR
air communications, ambient light
detection, safety and monitoring,
security systems, etc. For additional
information, call Clairex.
electrical characteristics (TA = 25°C unless otherwise noted)
symbol parameter
min typ
max units test conditions
ISC
Short-circuit current(3)
-
100
-
µA VBIAS = 0V, Ee = 5mW/cm2
ID
Dark current
VO
Open circuit voltage(3)
-
-
50
nA VF = 100mV, Ee = 0
-
-
50
nA VR = 15V, Ee = 0
-
0.35
-
V
Ee = 5mW/cm2
VBR
Reverse breakdown
25
-
-
V
IR = 100µA
CJ
Junction capacitance
tr, tf
Output rise and fall time(4)
-
-
400
pF VBIAS = 0V, f = 1MHz
-
-
10
µs RL = 1kâ¦
ÎHP
Total angle at half sensitivity points
-
100
-
deg.
notes: 3. Radiation source is a frosted tungsten lamp at a color temperature of 2854K or equivalent.
4. Radiation source is an AlGaAs IRED operating at a peak emission wavelength of 880nm and Ee = 20mW/cm2.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/15/06
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com
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