C458 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – INVERTER THYRISTOR C458

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One..
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INVERTER THYRISTOR
C458
53nm / 1400V / 2000Arrns / 35us
Type C458 reverse blocking thyristor is suitable for inverter applications. The silicon junction is
manufactured by the all-diffused process and utilizes the field-proven, interdigitated amplifying gate
structure. It is supplied in an industry accepted disc-type package, ready to mount using commercially
available heat dissipators and mechanical clamping hardware.
ON-STATE CHARACTERISTICS
MODEL
C458PD
C458PB
C458P
V /V
DRM ' Y RRM
Oto+125°C
volts
1400
@
-40°C
1300
1200
1100
1000
900
GMMM1 <A>
THERMAL IMPEDANCE
Gate Drive Requirements:
20 V / 20 ohms / O.Sus risetime
5 - 10 us minimum duration
External Clamping Force
5000 - 6000 Ibs.
24.5 - 26.7 kN
MECHANICAL OUTLINE
20° ±5°
B 0•
= 2.96 in (75.2 iraj
= 1.90 in (48.3 ion)
1.0T7 in (27.2 ran)