C180 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – High Power Silicon Controlled Rectifier

J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
High Power
Silicon
Controlled Rectifier
1300 Volts 235 A RMS
TELEPHONE: [phone]
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FAX: [phone]
I C180 I
AMPLIFYING GATE
C180 Silicon Controlled Rectifier is designed for phase
control applications. This is an all-diffused Pic-Pac device, employing the
field-proven amplifying gate.
FEATURES:
• High di/dt Ratings
• High dv/dt Capability with Selections Available
• Excellent Surge and I2t Ratings Providing Easy Fusing
• Rugged Hermetic Package with Long Creepage Path
MAXIMUM ALLOWABLE RATINGS
TYPE
REPETITIVE PEAK OFF-STATE
VOLTAGE, VDRM'
Tj - -40°C to -H25°C
REPETITIVE PEAK REVERSE
VOLTAGE, VRRMi
Tj = -40°C to +125°C
C180A
C180B
C180C
C180D
C180E
C180M
C180S
C180N
C180T
C180P
C180PA
C180PB
C180PC
100 Volts
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1 Half sinewave waveform, 10 msec. max. pulse width.
100 Volts
200
300
400
500
600
700
800
900
1000
1100
1200
1300
NON-REPETITIVE PEAK
REVERSE VOLTAGE, VRSM1
Tj = +125°C
200 Volts
300
400
500
600
720
840
950
1075
1200
1325
1450
1550
RMS On-State Current, IT(RMS)
Average On-State Current, IT(AV) • • •
Peak One-Cycle Surge (Non-Repetitive) On-State Current, ITSM (60 Hz)
Peak One-Cycle Surge (Non-Repetitive) On-State Current, ITSM (50 Hz)
Critical Rate-of-Rise of On-State Current (Non-Repetitive)*
Critical Rate-of-Rise of On-State Current (Repetitive)*
I2t (for fusing), for times > 1.5 milliseconds
Peak Gate Power Dissipation, PGM
Average Gate Power Dissipation, PG(AV)
Storage Temperature, Tstg
Operating Temperature, Tj
Stud Torque
'
Quality Semi-Conductors
235 Amperes (All Conduction Angles)
Depends on Conduction Angle (See Charts)
3500 Amperes
3200 Amperes
800 A/JUS
500 A/MS
32,000 (RMS Ampere)2 Seconds
10 Watts
2 Watts
-40°C to +150°C
-40°C to +125°C
250 Lb.-In. (Min.) - 300 Lb.-In, (Max.)
28 N-m (Min.) - 34 N-m (Max.)