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C148 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – HIGH SPEED Silicon Controlled Rectifier
J.S.11S.U
Cs
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ucti, One.
HIGH SPEED
Silicon
Controlled Rectifier
1200 VOLTS
63A RMS
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
C148 Silicon Controlled Rectifier is designed for power
switching at high frequencies. This is an Vll-dif fused device which is consider-
able smaller in size than comparably rated high power SCR's.
FEATURES:
• Fully characterized for operation inverter and chopper applications.
• High dv/dt with selections available.
• Excellent surge and I2t ratings providing easy fusing.
• Compact hermetic package, 54 — 28 stud.
MAXIMUM ALLOWABLE RATINGS
TYPES
REPETITIVE PEAK OFF-STATE
VOLTAGE, VORM»
Tj = -40°C to +125°C
REPETITIVE PEAK REVERSE
VOLTAGE, V R R M l
Tj = -40°C to +125°C
C148M
C148S
C148N
C148T
C148P
C148PA
C148PB
600 Volts
700
800
900
1000
1100
1200
600 Volts
700
800
900
1000
1100
1200
1 Half sinewave waveform, 10 ms max.pulse width.
NON-REPETITIVE PEAK
REVERSE VOLTAGE, VRSM »
Tj - +125°C
720 Volts
840
960
1080
1200
1320
1440
RMS On-State Current, IX(RMS)
Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM (60 Hz)
Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM (50 Hz)
I2t (for fusing) for times > 1.5 milliseconds
I2t (for fusing) for times > 8.3 milliseconds
Critical Rate-of-Rise of On-State Current, Non-Repetitive
Critical Rate-of-Rise of On-State Current, Repetitive
Average Gate Power Dissipation, PQ(AV)
Storage Temperature, Tstg
Operating Temperature, Tj
Stud Torque
Quality Semi-Conductors
63 Amperes
700 Amperes
670 Amperes
1360 (RMS Ampere)2 Seconds
2000 (RMS Ampere)2 Seconds
100 A/MS t
75 A/MS t
2 Watts
-40°Cto+150°C
-40°Cto+125°C
30 Lb.-In.
3.4 N-rn