BZV86 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Low-voltage stabistors

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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Low-voltage stabistors
BZV86 series
FEATURES
• Low-voltage stabilization
• Forward voltage range: 1.4 to 3.2 V
• Total power dissipation:
max. 330 mW
• Differential resistance range:
max. 20 to 35 ii.
DESCRIPTION
Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass
package. The series consists of four types: BZV86-1V4 to BZV86-3V2.
APPLICATIONS
• Power clipping
• Level shifting
• Low-voltage regulation
• Temperature stabilization.
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VR
continuous reverse voltage
IF
continuous forward current
BZV86-1V4
BZV86-2VO
BZV86-2V6
BZV86-3V2
Plot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
Tart^S'C
MIN.
-
MAX. UNIT
10 V
-
200 mA
-
150 mA
-
125 mA
-
100 mA
-
330 mW
-65 +150 °C
-
150 °C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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