BYV30 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – ULTRA FAST RECOVERY RECTIFIER DIODES

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, line,
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ULTRA FAST RECOVERY RECTIFIER DIODES
Glass-passivated, high-efficiencyepitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward
voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.
They are intended for use in switched-mode power supplies and high-frequency circuits in general,
where low conduction and switching losses are essential. The series consists of normal polarity
(cathode to stud) types.
QUICK REFERENCE DATA
BYV30-300 400 500
Repetitive peak reverse voltage
Average forward current
Forward voltage
Reverse recovery time
VRRM
Ip(AV)
Vp
trr
max-
ma*-
<
<
30° 4 ^{00 500}
V
14
A
1 05
V
50
ns
MECHANICAL DATA
Fig.1 DO-4 with metric (M5) stud as standard.
10-32 UNF is available upon request with suffix U (e.g. BYV30-400U).
Dimensions in mm
Net mass: 6 g
Diameter of clearance hole: max. 5.2 mm
Accessories supplied on request: see data sheets
Mounting instructions and Accessories
for DO-4envelopes.
Supplied with device: 1 nut, 1 lock washer.
Nut dimensions across the flats: 9.5 mm
Torque on nut:
min. 0.9 Nm (9 kg cm)
max. 1,7 Nm (17 kg cm)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors