BUZ84 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – PowerMOS transistor

20 STERNAVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
PowerMOS transistor
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BUZ84
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
metal envelope.
This device is Intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and DC/AC converters,
and in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
RDS(ON)
Drain-source voltage
Drain current (d.c.)
Total p»wer dissipation
Drain-source on-state resistance
MAX.
800
5,3
125
2,0
UNTT
V
A
W
n
MECHANICAL DATA
Dimensions in mm
Net mass: 12 g
Pinning:
l=Gate
2 • Drain
3 = Source
38,84 30,1
19,5
H.55
| max
—10,9-.-
1,6 —
Fig.l TO3; drain connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs)
to prevent damage to MOS gate oxide.
2. Accessories supplied on request: refer to Mounting instructions for TO3 envelopes.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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