BUZ80A Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode)

U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One..
BUZ 80A
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Type
BUZ 80A
YDS
ID
800V 3A
^DS(on)
30
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kQ
Continuous drain current
Tc = 50 °C
Pulsed drain current
Tc = 25 °C
Gate source voltage
Power dissipation
Tc = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
VDS
^DGR
ID
/Dpuls
VGS
^tot
7]J
/ c_stt_gn
ftthJC
^thJA
Values
800
Unit
V
800
A
3
12
±20
V
W
75
-55 + 150 °C
-55 + 150
<1.67
K/W
75
E
55/150/56
Quality Semi-Conductors
Pin1
Pin 2
D
Pin 3