BUZ80 Datasheet, PDF (1/4 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, L/nc.
BUZ 80
N channel
Enhancement mode
Avalanche-rated
TELEPHONE: [phone]
Pin1
Pin 2
D
Pin 3
Type
BUZ 80
VDS
800V
ID
3.1 A
^DS(on)
4Q
Package
TO-220 AB
Maximum Ratings
Parameter
Continuous drain current
7C = 28 °C
Pulsed drain current
Tc = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by 7jmax
Avalanche energy, single pulse
/D = 3.1 A, VDD = 50V, RGS = 25Q
L = 62.4 mH, 7j = 25 °C
Gate source voltage
Power dissipation
7C = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
ID
'Dpuls
'AR
£AR
£AS
Vfes
p[ol
TI
^stg
^thJC
^thJA
Values
3.1
12.5
3.1
8
Unit
A
mj
320
±20
V
W
100
-55... + 150 °C
-55... + 150
<1.25
K/W
75
E
55/150/56
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