BUZ72L Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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BUZ 72 L
N channel
Enhancement mode
Avalanche-rated
Logic Level
Pin1
G
Pin 2
D
Pin 3
S
Type
BUZ 72 L
Vbs
ID
100V 10A
RDS(on)
0.2 Q
Maximum Ratings
Parameter
Continuous drain current
Tc = 25 °C
Pulsed drain current
Tc = 25 °C
Avalanche current.limited by 7jmax
Avalanche energy,periodic limited by 7jmax
Avalanche energy, single pulse
ID = 10 A, VDD = 25 V, RGS = 25 Q
L = 885 uH, 7] = 25 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
Tc = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Quality Semi-Conductors
Package
TO-220 AB
Symbol
ID
/Dpuls
/AR
£AR
HAS
VGs
VQs
Pioi
T>
Ts\g
^thJC
ftthJA
Values
Unit
A
10
40
10
7.9
mJ
59
±14
V
±20
W
40
-55... + 150 °C
-55... + 150
<3.1
K/W
75
E
55/150/56