BUZ71 Datasheet, PDF (1/2 Pages) STMicroelectronics – N - CHANNEL 50V - 0.085W - 17A TO-220 STripFET] POWER MOSFET

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One,
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FAX: [phone]
Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate
BUZ71
BUZ71A
TMOS POWER FETs
12 AMPERES
•DSIon) -
0.12 OHMS
60 VOLTS
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage (RQS - 20 Mil
Gale-Source Voltaga
Drain Currant — Continuous
- Pulsed
Total Power Dissipation @ TC - 25°C
Darata above 25°C
Oparating and Storage-Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
>
— Junction loAmbienl
Maximum Lead Temp, for Soldering Purpoaea,
1/8" from case for 5 seconds
ELECTRICAL CHARACTERISTICS <TC - 25°C unless otherwise noted)
L
Charactariatle
Symbol
OFF CHARACTERISTICS
Draln-Sourca Breakdown Voltaga (VQS - 0, ID » 1 mA)
Zero Gate Voltaga Drain Current
(VDS " so voitj, VQS - w
(VDS = so voits. vGS = o, TJ = i25-ci
VIBRIDSS
IDSS
Gala-Body Leakage Current, Forward (VQSF - 20 Vdc, VDS " 0) IGSSF
Gala-Body leakage Current, Reverse (VQSR - 20 Vdc, VQS = 0) _IGSSR
Symbol
VDSS
VDGR
VGS
ID
'DM
PD
TJ' Tstg
"we
R&JA
TL
50
—
—
-
TO-220AB
BUZ71 BUZ71A
SO
50
±20
12
48
40
0.32
-55 to 150
Unit
Vdc
Vdc
Vde
Adc
Watts
VWC
°C
3.12
°C/W
62.5
275
«c
Typ
Max
Unit
—
—
Vdc
_
/lAdc
250
1000
10
100
nAdc
10
100
nAdc
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