BUZ54A Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – Power MOS transistor

zSs.mi-Condu.ckoi \P\oducti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BUZ54A
TELEPHONE: [phone]
[phone]
FAX: [phone]
Power MOS transistor
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power ttansistoi In a
metal envelope.
This device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and DC/AC converters,
and in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
ptot
RDS(ON)
Dialn-source voltage
Drain current (d.c.)
Total power dissipation
Drain-source on-state resistance
MAX
1000
4,5
125
2,6
UNIT
V.
A
W
n
MECHANICAL DATA
Dimensions in mm
Net man: 12 g
Pinning:
1 = Gate
2 - Drain
3 = Source
25,4-
*8,3*i
4,2
38,84 30,1
19,5
D—* 1,55
*10,9-~
1,6— -*-11,o-J
fig, I TO3; drain connected to mounting base.
Notes
1. Observe the general handlingprecautions for electrostatic-discharge sensitivedevices (ESDs)
to prevent damage to MOS gate oxide.
2. Accessories supplied on request: refer to Mounting instructions for TO3 envelopes.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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