BUZ54 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – PowerMOS Transistor

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Cs
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BUZ54
PowerMOS Transistor
, Una.
TELEPHONE: [phone]
[phone]
FAX: [phone]
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
metal envelope.
This device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and DC/AC converters,
and in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL
VDS
ID
ptot
RDS(ON)
PARAMETER
Drain-source voltage
Drain current (d.c.)
Total power dissipation
Drain-source on-state resistance
MAX.
1000
5,1
125
2,0
UNIT
V
A
W
n
MECHANICAL DATA
Dimensions in mm
Net mass: 12 g
Pinning:
1 - Gate
2 » Drain
3 " Source
25,4
~8,3~
4,2
38,84 30,1
19,5
,^J 1,55
1 max
10,9-*
7Z»3««!.3
Ftg. 1 T03; drain connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs)
to prevent damage to MOS gate oxide.
2. Accessories supplied on request: refer to Mounting instructions for TO3 envelopes.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.b'eboth accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.
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