BUZ53A Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – N-channel enhancement mode

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
TELEPHONE: [phone]
[phone]
FAX: [phone]
BUZ53A
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
metal envelope.
This device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and DC/AC converters,
and in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Pfot
RDS<ON>
Drain-source voltage
Drain current (d.c.)
Total power dissipation
Drain-source on-state resistance
MAX.
1000
2,6
78
5,0
UNIT
V
A
W
fl
MECHANICAL DATA
Dimensions in mm
Net mass: 12 g
Pinning:
1 «= Gate
2 = Drain
3 » Source
t
16,9
i
84 30,1 |
«,«
//•h
//. ^•
4,2
19,5
, * 1,55
max
—10,9—
1,6-
Fig, 1 TO3: drain connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices(ESDs)
to prevent damage to MOS gate oxide.
2. Accessories supplied on request: refer to Mounting instructions for TO3 envelopes.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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