BUZ50A Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode)

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BUZ 50 A
N channel
Enhancement mode
, One.
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Pin 1 Pin 2 Pin 3
Type
BUZ 50 A
VDS
ID
1000V 2.5 A
^DS(on)
5Q
Package
TO-220 AB
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGB = 20 kQ
Continuous drain current
TC = 25 °c
Pulsed drain current
TC = 25 °C
Gate source voltage
Power dissipation
Tc = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VDS
DGR
ID
/Dpuls
VGS
Ptoi
T\ ctn
ftthJC
^thJA
Values
Unit
1000
V
1000
A
2.5
10
±20
V
W
75
-55 + 150 °C
-55 + 150
<1.6
K/W
75
E
55/150/56
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