BUZ41A Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
1 N channel
1 Enhancement mode
Avalanche-rated
BUZ 41 A
TELEPHONE: [phone]
Pin1
Pin 2
D
Pin 3
Type
BUZ 41 A
VDS
500V
ID
4.5 A
ffDS(on)
1.5Q
Package
TO-220 AB
Maximum Ratings
Parameter
Continuous drain current
Tc = 36 °C
Pulsed drain current
Tc = 25 °C
Avalanche current, limited by 7jmax
Avalanche energy, periodic limited by 7jmax
Avalanche energy, single pulse
ID = 4.5 A, VDD = 50 V, RGS = 25 a
L = 28.4 mH, 7] = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
ID
fopuls
/AR
EAR
£AS
VGS
Plot
T\sig
^thJC
^thJA
Values
Unit
A
4.5
18
4.5
8
mJ
320
±20
V
W
75
-55... + 150 °C
-55... + 150
<1.67
K/W
75
E
55/150/56
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