BUZ36 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – N-channel enhancement mode

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
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BUZ36
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
metal envelope.
This device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and DC/AC converters, and
in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
'VDS
ID
Plot
RDS(ON)
Drain-source voltage
Drain current (d.c.)
Total power dissipation
Drain-source on-state resistance
MAX.
200
22
125
0,12
UNIT
V
A
W
«
MECHANICAL DATA
Dimensions in mm
Net mass: 12 g
Pinning:
1 = Gate
2 = Drain
3 - Source
4,2 •
38,84 30,1
19,5
'1,55
> max
10,9-^
1,6-
Fig,} TO3; drain connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs)
to prevent damage to MOS gate oxide.
2. Accessories supplied on request: refer to Mounting instructions for TO3 envelopes.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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