BUZ355 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
BUZ 355
N channel
Enhancement mode
Avalanche-rated
TELEPHONE: [phone]
Pint Pin 2 Pin 3
Type
BUZ 355
VDS
ID
800V 6A
^DS(on)
1.50
Package
TO-218AA
Maximum Ratings
Parameter
Continuous drain current
rc =29°c
Pulsed drain current
Tc = 25 °C
Avalanche current.limited by 7jmax
Avalanche energy,periodic limited by 7]max
Avalanche energy, single pulse
/D = 6 A, VDD = 50 v, RQS = 25 Q
L = 37.5 mH, 7] = 25 °C
Gate source voltage
Power dissipation
Tc = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
ID
'Dpuls
/AR
^AR
EAS
VGS
Plot
T\g
^thJC
^thJA
Values
6
24
5.1
15
Unit
A
mJ
720
±20
V
W
125
-55... + 150 °C
-55... + 150
<1
K/W
75
E
55/150/56
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