BUZ31 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
N channel
Enhancement mode
Avalanche-rated
, Una.
BUZ 31
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Pin1 Pin 2 Pin 3
Type
BUZ 31
VDS
200V
A3
14.5 A
^DS(on)
0.2 Q
Package
TO-220 AB
Maximum Ratings
Parameter
Continuous drain current
Tc = 30 °C
Pulsed drain current
7C = 25 °C
Avalanche currentjimited by Tjmax
Avalanche energy,periodic limited by 7jmax
Avalanche energy, single pulse
/D = 14.5 A, VDD = 50 V, f?GS = 25 Q
L = 1.42mH, Tj = 25°C
Gate source voltage
Power dissipation
Tc = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
ID
/Dpuls
/AR
EAR
£AS
VGS
Ptoi
T\g
^thJC
^thJA
Values
Unit
A
14.5
58
14.5
9
mJ
200
±20
95
-55... + 150
-55... + 150
<1.32
75
E
55/150/56
V
W
°C
K/W
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