BUZ30A Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
N channel
Enhancement mode
Avalanche-rated
, One..
BUZ 30A
TELEPHONE: [phone]
Pin1
Pin 2
D
Pin 3
Type
BUZ 30A
YDS
ID
200V 21 A
^DS(on)
0.130
Package
TO-220 AB
Maximum Ratings
Parameter
Continuous drain current
TC = 26 °C
Pulsed drain current
Tc = 25 °C
Avalanche currentjimited by 7jmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
/D = 21 A, I/DD = 50 V, RGS = 25 Q
L = 1.53mH, 7] = 25°C
Gate source voltage
Power dissipation
Tc = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
ID
/Dpuls
/AR
£AR
HAS
VGS
Plot
T\stg
^thJC
^thJA
Values
Unit
A
21
84
21
12
mJ
450
±20
125
-55... + 150
-55... + 150
<1
75
E
55/150/56
V
W
°C
K/W
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