BUZ24 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – N-channol enhancement mode

^zmi-Conductoi Lpioaucti, Dnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
BUZ24
GENERAL DESCRIPTION
N-channol enhancement mode
field-effect power transistor in a
metal envelope.
This device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and DC/AC converters,
and in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
RDSCON)
Drain-source voltage
Drain current (d.c.)
Total power dissipation
Drain-source on-state resistance
MAX.
100
32
125
0,06
UNIT
V
A
W
n
MECHANICAL DATA
Dimensions in mm
Net mass: 12 g
Pinning:
1 = Gate
2 = Drain
3 = Source
25,4-
*8,3»
38,66. 30,1
19.S
1,55
max
1,6-*- U-11,8-.- "MHO
Fig.I T03; drain connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs)
to prevent damage to MOSgate oxide.
2. Accessories supplied on request: refer to Mounting Instructions for TO3 envelopes.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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