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BUZ11 Datasheet, PDF (1/3 Pages) STMicroelectronics – N - CHANNEL 50V - 0.03W - 33A TO-220 STripFET] MOSFET
^zmi-Conauctoi L/^ioaucti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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(212)227-6005
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BUZ11
N - CHANNEL 50V - 0.03Q - 33A TO-220
STripFET™ MOSFET
TYPE
VDSS
RDS(on)
ID
BUZ11
50 V < 0.04 ii 33 A
TYPICAL Ros(on) = 0.03Q
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
HIGH CURRENT CAPABILITY
175°C OPERATING TEMPERATURE
APPLICATIONS
. HIGH CURRENT, HIGH SPEED SWITCHING
. SOLENOID AND RELAY DRIVERS
. REGULATORS
. DC-DC & DC-AC CONVERTERS
. MOTOR CONTROL, AUDIO AMPLIFIERS
. AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS
VDGR
Drain-source Voltage (VGS= 0)
Drain- gate Voltage (RGs = 20 kQ)
50
V
50
V
VGS Gate-source Voltage
± 20
V
ID Drain Current (continuous) at Tc = 25 °C
33
A
IDM Drain Current (pulsed)
134
A
Plot Total Dissipation at Tc = 25 °C
Tstg Storage Temperature
T Max. Operating Junction Temperature
90
W
-65 to 175
°C
175
°C
DIN HUMIDITY CATEGORY (DIN40040)
E
IEC CLIMATIC CATEGORY (DINIEC 68-1)
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
55/150/56
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