BUZ10L Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

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BUZ 10 L
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
Pin1
G
Pin 2
D
Pin 3
S
Type
BUZ 10 L
VDS
50V
ID
23 A
RDS(on)
0.07 Q.
Maximum Ratings
Parameter
Continuous drain current
7C = 26 °C
Pulsed drain current
Tc = 25 °C
Avalanche currentjimited by 7]max
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
/D = 23 A, VDD = 25 V, RGS = 25 0
/.= 15.1 uH, 7] = 25°C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
rc = 25 °c
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
/Dpuls
/AR
£AR
£AS
VGS
^gs
^tot
Tl
Tstg
^thJC
^thJA
Values
23
92
23
1.3
Unit
A
mJ
8
±14
±20
75
-55... + 150
-55... + 150
<1.67
<75
E
55/150/56
V
W
°C
K/W