BUZ10 Datasheet, PDF (1/4 Pages) STMicroelectronics – N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET

J.EIS.ZU
, Lfna.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BUZjtO
SIPMOS ® Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
N channel
Enhancement mode
Avalanche-rated
Pin1
Pin 2
D
Pin 3
Type
BUZ 10
VDS
50V
ID
23 A
^DS(on)
0.07 Q
Maximum Ratings
Parameter
Continuous drain current
TC = 26 °C
Pulsed drain current
Tc = 25 °C
Avalanche currentjimited by Tjmax
Avalanche energy.periodic limited by 7jmax
Avalanche energy, single pulse
/D = 23 A, VDD = 25 V, RGS = 25 Q
L = 15.1uH, 7] = 25°C
Gate source voltage
Power dissipation
Tc = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Quality Semi-Conductors
Package
TO-220 AB
Symbol
/D
/Dpuls
/AR
£AR
£AS
VGS
^tot
T\g
RthJC
^?thJA
Values
Unit
A
23
92
23
1.3
mj
8
±20
V
W
75
-55 ... + 150 °C
-55... + 150
£1.67
K/W
<75
E
55/150/56