BUY79 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistors

,U na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
TELEPHONE: [phone]
[phone]
FAX: [phone]
BUY79
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO=350V(Min.)
• Low Collector-Emitter Saturation Voltage-
: VCE(sat)=1.5V(Max.)@lc=5A
APPLICATIONS
• Designed for use as high-speed power switches at high
voltages.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
750
V
VCES ^{Collector-Emitter Voltage}
750
V
VCEO ^{Collector-Emitter Voltage}
350
V
VEBO Emitter-Base Voltage
7
V
Ic
Collector Current-Continuous
8
A
ICM
Collector Current-peak
Collector Power Dissipation
PC
T.
Junction Temperature
Tstg
Storage Temperature Range
10
A
60
W
175
r
-65-175 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
D.
Thermal Resistance.Junction to Case
MAX UNIT
1.66 °c/w
3
I
PIN 1.BASE
i^
2.BM1ITTER
r*
3. COLLECTOR (CASE)
TO-3 package
2
•A
l-N-1
\
'
'
*
I
\
-JU-0
ft
/ ^r, ^{s^i ^v^}
t
4A G
f ^{^.,*<}
t
B
1
f
"•^^^
'^{[ 1}
iran
MM UINJ MAX
A
3900
B 2S30 26.67
C
78" 8.30
D
090 1.10
E
140 1.60
H
5.46
K 11.40 13.50
L 1675 1705
N 19.40 1962
0 400 4.20
U 3000 3030
V
430 4.50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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