BUY78 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistors

,j
CX
LJ
, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
TELEPHONE: [phone]
[phone]
FAX: [phone]
BUY78
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo=300V(Min.)
• Low Collector-Emitter Saturation Voltage-
:VCE(sat)=1.4V(Max.)@lc=5A
APPLICATIONS
• Designed for use as high-speed power switches at high
voltages.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
3
I
PIN 1.BASE
n*.
3. COLLECT OR (CASE)
'
TO-3 package
VCBO
VOES
VCEO
VEBO
Ic
ICM
PC
T,
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Collector Power Dissipation
@Tc=£75'C
Junction Temperature
Storage Temperature Range
600
V
600
V
300
V
7
V
8
A
10
A
60
W
175
•c
-65-175 r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance.Junction to Case}
MAX UNIT
1 .66 r/w
h*"** N"p*i
I ! ^{i i —' ^ C}
t-E
-JU-Dapi.
s^\ y
f —i t
—$5 ^{O tj}
f
^^ vfS^
"i-ng
inn
Dltt MIH tUU(
A
3900
B 2530 26 67
C
?90 8,30
0 090 1 10
E
140 1.60
K
546
K 1HO 13 50
L 1675 17 05
N 19.40 19 62
0
400 4 20
U 30.00 30
V
430 4 50
NJ Semi-Conductorsreserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissionsdiscovered in itsuse.
NJ Semi-Conductors encouragescustomersto verify that datasheets are current before placing orders.
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