BUY77 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistors

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, One..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
TELEPHONE: [phone]
[phone]
FAX: [phone]
BUY78
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo=300V(Min.)
• Low Collector-Emitter Saturation Voltage-
:VCE(sat)=1.4V(Max.)@lc=5A
APPLICATIONS
• Designed for use as high-speed power switches at high
voltages.
ABSOLUTE MAXIMUM RATINGS(T8=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
3
I
PIN 1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
2
VCBO
VCES
VCEO
VEBO
Ic
ICM
PC
Tj
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Collector Power Dissipation
@TC=£75°C
Junction Temperature
Storage Temperature Range
600
V
600
V
300
V
7
V
8
A
10
A
60
W
175
•c
-65-175 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c ^{Thermal Resistance.Junction to Case}
1.66 'CM/
«
A
: ^{, f I.. ,}
1
-I J c
I
-JU-D 2 PL ^t-K
r _V~\
/ « ^{/I/k^X.}
•EH
tf
!? ^{k-£—(}
N^-ltP^^*
cj _c
I
^BH
ona
A
^B
C
D
E
I1HU
m MAX
3900
25 30 26.67
78° ⁸³⁰
090 L 1 10
140 1j60
H
5.46
K 11.40 13.50
L
1675 1705
N 18.40 1362
rnf- ^Q
400
U 3000 ³⁰³⁰
V
4,30
4.50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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