BUY73 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
usA
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
BUY73
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= 200V(Min.)
• Low Collector Saturation Voltage-
:VCE(.at)=1.4V@lc=10A
APPLICATIONS
• Designed for general switching applications at higher outputs.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
MAX
UNIT
VCBO Collector-Base Voltage
280
V
VCES Collector-Emitter Voltage
280
V
VCEO Collector-Emitter Voltage
200
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
25
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=£25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
5
A
117
W
175
•c
-65-175 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c ^{Thermal Resistance, Junction to Case 1.28 "C/W}
I
y^
T»
'
PIN l.BASE
I. BETTER
3. COLLECT OR (CASE)
TO-3 package
t
'
i
t
r
t-E
1
1
3 PL
-J 1
3_i
^ unit
out h MM MAX
A
3900
B 25.30 26.67
C
7.80 8.30
0
0.90 1.10
E
__fi_
t.40 160
1092
B
5.46
It ¹¹⁴⁰ 13.50
1675 17.05
N 1S.40 19.62
Q
4.00 420
U M.OO ³⁰²⁰
V
4.30 450
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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