BUY72 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistor

, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
UsA
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
BUY72
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.)
• Low Collector Saturation Voltage-
:VCE(Mi)=1.5V@lc=7A
APPLICATIONS
• Designed for general switching applications at higher outputs.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
MAX
VCBO Collector-Base Voltage
280
UNIT
V
',
PIN 1 BASE
yS
2. B/IITTER
kt
3. COLLECT OR (CASE)
1
TO-3 package
VCES
VCEO
VEBO
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
280
V
200
V
6
V
A
.,
f«-N-*j
\ _l
II
\H
1_ C
Ic
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
Collector Power Dissipation
PC
Tj
Junction Temperature
Tslg
Storage Temperature Range
10
A
15
A
2
A
60
W
175
•c
-65-175
r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c ^{Thermal Resistance, Junction to Case 1 .66 "CM/}
"\
f ^ ^T ^"^-i / <
— ty Ci
r
t
B
I
VS.
JT
1
MqH
IIHII
DW MM MAX
_A
3900
B 25.30 26*7
t 7.80 830
D 0.90 110
E
MO 1.60
6
1092
H
5.46
K 1140 1350
L 1675 1705
N 19.40 1962
Q
4.00 4.20
U 3000 3020
V
4.30 450
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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