BUY70C Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3

Isiizu tSzinL-Con
Cx
t/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One..
Silicon NPN Power Transistors
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FAX: [phone]
BUY70C
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
:VCEo(sus)=200V(Min)
• Low Collector-Emitter Saturation Voltage-
tr 5.0V(Max.)@ lc= 4A
APPLICATIONS
• Designed for switching mode power supplies, inverters, and
CRT scanning systems.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
I
1
Y
"X.
'
PIN 1.BASE
2- EMITTER
3. COLLECT OR (CASE)
TO-3 package
VCBO
VCEO
VEBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
500
V
200
V
8
V
~_,—ii^nu^__C1ⁱ
Ic
Collector Current-Continuous
ICM
Collector Current-peak
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25°C
T,
Junction Temperature
Tstg
Storage Temperature Range
10
A
15
A
3.0
A
75
W
200
r
-65-200 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c ^{Thermal Resistance.Junction to Case}
2.3 'C/W
V-,
&^{X ^}7^C f^u §^k—^{^ ^\}$ ^{_J t}
t V^. ^ ~1 i
\ ~~
IIHI1
DM* MM IWiX
A
3900
B 2530 26.67
C
790 8.30
0
090 \ 10 1 40 1
sO
6
10,92
H
546
K 1140 13. SO
L 1675 17 as
M 19.40 19 S2
0
400 4 20
U 30.00 30 20
t
430 4 50
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
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