BUY70A Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3

J
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Lf na.
Silicon NPN Power Transistors
TELEPHONE: [phone]
[phone]
FAX: [phone]
BUY70A
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEo(sus) = 400V(Min)
• Low Collector-Emitter Saturation Voltage-
tr 5.0V(Max.)@ lc= 4A
APPLICATIONS
• Designed for switching mode power supplies, inverters, and
CRT scanning systems.
ABSOLUTE MAXIMUM RATINGS(Ta=25X:)
SYMBOL
PARAMETER
VALUE UNIT
3
I
1
Y
nt
'
PIN 1.BASE
2.BWIITTER
3. COLLECT OR (CASE)
TO-3 package
VCBO
Collector-Base Voltage
1000
V
VCEO
VEBO
Ic
ICM
IB
PC
Tj
Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current-Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
400
V
8
V
10
A
15
A
3.0
A
75
W
200
°C
-65-200
'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance.Junction to Case}
MAX UNIT
2.3 °c/w
t
<
> _{_, C}
I
— JU-D,
t-K
M ^v-t
T
*— u —*
|*-L-»
i__V^{/^}_^f_^^T^_jⁱ_t._^_^{^}^₀^/
r_-
i33
tt
'^c5[
B
1
Msa
nun
DIM MM MAX
A
3900
B 25.30 26.67
C 7m ^8.30
D 090 1.10
E
140 1.60
H
546
K 11.40 13.50
L 1675 1705
N 19.40 1962
a 4.00 420
If 3000 ³⁰²⁰
V
430 4.50
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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