BUY69A Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,200-400V,100W)

, Una..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
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FAX: [phone]
BUY69A
DESCRIPTION
• Collector-Base Breakdown Voltage-
:V(BR)CBo= 800V(Min.)
High Speed Switching
APPLICATIONS
• Designed for horizontal deflection output stage of CTV
receivers and high voltalge, fast switching and industrial
application.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Emitter Voltage
800
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
8
V
Ic
Collector Current-Continuous
10
A
ICM
Collector Current-peak
15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@Tc~25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
3.0
A
100
W
200
'C
-65-200 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance, Junction to Case}
MAX UNIT
1 .75 •c/w
I
1 __T
"X.
'
PIN 1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
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r
I
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f ^? _{Vs^ ^fS'}
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t
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B
1
H3S
DIM
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B
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D
E
G
K
K
L
N
JL
U
y
I1MI1
HIM MAX
3900
2530 26.67
?9° ^8,30
090 1.10
140 1.60
1 0 92
546
"40 13.50
16.75 1705
19,40 1962
40° ^4.20
'JO™1 ³⁰²⁰
430 4.50
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