BUY58 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

zSzmi-Conauctoi \P\odu.ci^, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
BUY58
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= 160V(Min.)
• Low Collector Saturation Voltage-
:VCE(.at)=1.3V@lc=10A
APPLICATIONS
• Designed for general switching applications at higher outputs.
ABSOLUTE MAXIMUM RATINGS(Ta=25"C)
SYMBOL
PARAMETER
MAX
UNIT
VCBO Collector-Base Voltage
250
V
VCES ^{Collector-Emitter Voltage}
250
V
VCEO ^{Collector-Emitter Voltage}
160
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
15
A
I CM
Collector Current-Peak
25
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TcsS25r
Tj
Junction Temperature
Tstg
Storage Temperature Range
5
A
117
W
175
'C
-65-175 r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c ^{Thermal Resistance, Junction to Case 1.28 "C/W}
"j
PIN 1. BASE
2. EMITTER
3. COLLECTOR (CASE)
TO-3 package
2
t
1
1
C
I
i
-JU-D if i ^t-K
V-.
j«-L,-*
/T^X, /
fiv Si ^
3fc ttff
t
vvT^^
^ H3H
•BH
\ _t C_t
iB
'I
nun
DM UM MAX
A
3900
B 25.30 26.671
C
?«) 830
D 0.90 1.10
E
t 40 1 60
6
1092
H
546
K 1140 13.50
L 1675 1705
N 19.40 19.62
q
400 420
U 3000 ³⁰²⁰
Y 4.30 450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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