BUY57 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistor

J
, Una.
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
BUY57
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)CEo=125V(Min.)
• Low Collector Saturation Voltage-
:VCE(wt)=1.3V@lc=10A
APPLICATIONS
• Designed for general switching applications at higher outputs.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
MAX
VCBO
Collector-Base Voltage
150
UNIT
V
PIN 1.BASE
2. EMITTER
3. COLLECTOR (CASE)
TO-3 package
VOES Collector-Emitter Voltage
150
V
VCEO Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
low
Collector Current-Peak
15
A
25
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=S25°C
T,
Junction Temperature
Tstg
Storage Temperature Range
5
A
117
W
175
•c
-65-175
°c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance, Junction to Case}
MAX UNIT
1.28 •c/w
Iran
DM UN MAX
A
3900
B 25.30 ^{26 .S7}
c
7.80 8.30
D
0.90 1 10
E
MO 1.60
<3
1092
H
5.46
K 11.40 13.93
L
1675 1705
N 19.40 19,62
Q
4.00 420
U 30.00 ³⁰²⁰
V
4,30 450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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