BUY56 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistor

c2\£.w J.
t Unc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
USA.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
BUY56
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)CEo=160V(Min.)
• Low Collector Saturation Voltage-
:VCE(sat)=1.5V@lc=7A
APPLICATIONS
• Designed for general switching applications at higher outputs.
X
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
MAX
UNIT
VCBO Collector-Base Voltage
250
V
VCES ^{Collector-Emitter Voltage}
250
V
VCEO Collector-Emitter Voltage
160
V
VEBO ^{Emitter-Base Voltage}
6
V
Ic
Collector Current-Continuous
ICM
Collector Current-Peak
10
A
15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@Tc=£75"C
Tj
Junction Temperature
2
A
60
W
175
•c
Tstg
Storage Temperature Range
-65~175 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance, Junction to Case}
MAX UNIT
1 .66 °c/w
3
PIN 1.B/WE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
2
A
p-t _'-1
t
I
i _—J
C
t-E
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V~\ _{.•"•jA}
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tt
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'
B
j
V_p_H
nun
DM UN MAX
A
3900
B :>S.3£l 26.67
<;
?.« 8.30
0 0.90 1.10
E
1 .40 1 .60
0
1092
H
546
J5 1 ^{t40 13.50}
L 1675 17.05
N 1940 19.62
0_u
4.00 4.20
3000 3020
V
4.30 4.50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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