BUY55 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: [phone]
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BUY55
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)CEO=125V(Min.)
• Low Collector Saturation Voltage-
:VCE(«,)=1.5V@lc=7A
APPLICATIONS
• Designed for general switching applications at higher outputs.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
MAX
VCBO
Collector-Base Voltage
150
UNIT
V
',
PIN 1.BASE
y^
2. EMITTER
T»
3. COLLECT OR (CASE)
1
TO-3 package
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Ic
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
Collector Power Dissipation
PC
T,
Junction Temperature
Tstg
Storage Temperature Range
150
V
125
V
6
V
10
A
15
A
2
A
60
W
175
°C
-65-175
•c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R(h j-c ^{Thermal Resistance, Junction to Case 1 .66 'C/W}
*
A
*t
t
c
'
'
*
!
-JU-D, PL ^t-K
^r-? ^/-GH
• ^{/ 1} t
ft
j^-i— ^
$
\^ ^ \_ jf r
iB
' I ^{^}
1
I1WI1
DM MM MAX
A
3900
B 2S.3C 26.67
C
'.80 8.30
D
0.9C 1.10
E
1.40 1.60
G
1092
H
5.46
K 1140 13.50
L 1675 17.06
W 19.40 19.62
Q 4.00 4.20
U 3000 ³⁰²⁰
V
4JO 450
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notice. Information Furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
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