BUY49P Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

, Dna.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 070C1
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
BUY49P
DESCRIPTION
• High Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)
• High Current Capability
APPLICATIONS
• Designed for high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO ^{Collector-Base Voltage}
250
V
VCEO Collector-Emitter Voltage
200
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
3.0
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
(^t?g³j^\TI c-^O"^C°>^P-
Tj
Junction Temperature
5.0
A
15
W
150
'C
Tstg
Storage Temperature Range
-65-150
'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rthj-c ^{Thermal Resistance.Junction to Case}
8.33 'C/W
• .-cj
-
!
., i .
123
PIN l.ailTTER
I. COLLECTOR
3. BASE
TO-1 26 package
r^_{V 1}^Cp
r _{if i :}
1'
r^{H - ~v}
if
'
K ~*
*-R
-f ^{6 !•»-*}
c^ J
\52 3
mm
DIM WIN
A 10.70
B ^7.70
C 2.60
D 0.66
F 3.10
G 4.48
H 2.00
it ^r
MAX
10.90
7.90
2.80
0.86
3JO
4.68
2.20
1_WL
K 16.10 16.30
0 3.70 3.90
R 0.40 0.60
y 1.17 1.37
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of"going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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