BUY24 Datasheet, PDF (1/2 Pages) Seme LAB – SILICON PLANAR EPITAXIAL NPN POWER SWITCHING TRANSISTOR

,j
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, LJnc.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
BUY24
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
• V(BR)CEO wuv^iviiii.;
• Low Collector Saturation Voltage-
:VCE(sat)=1.0V@lc=5A
APPLICATIONS
• Designed for use switching and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
MAX
UNIT
VCBO Collector-Base Voltage
120
V
VCEO ^{Collector-Emitter Voltage}
60
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
Collector Power Dissipation
PC
@TC<75'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
5
A
15
W
150
•c
-55-150
•c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c ^{Thermal Resistance, Junction to Case}
5.0
"CM/
<^H
3
PIN 1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
•* ²
r^-N-1
\
t
L -I
t-E
\H
-*tu-b 2KL
r ^{K— U —*}
^i^> ^/
A&^_{vU .fI?}
'_t
\
C
t_V 1
t
I
GH
IIHII
DM MM WAX
A
3900
R ^{25.30 26.67}
c
7.80
8.30
0
0.90 1.10
E
t.40 1,60
G
1092
H
5.46
K 11.40 _13.50
L 1675 17.05
N 19.40 13.62
q
4.00 420
U 3000 ³⁰²⁰
V
4.30 450
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