BUX99 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Dna.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
BUX99
DESCRIPTION
• High Collector Current-lc= 1.5A
• High Collector-Emitter Sustaining Voltage-
r 300V(Min)
APPLICATIONS
• Designed for use in fast switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
VCES
Collector-Emitter Voltage
VBE=0
730
VCEO
Collector-Emitter Voltage
300
UNIT
V
V
VEBO
Emitter-Base Voltage
12
V
Ic
Collector Current-Continuous
1.5
A
ICM
Collector Current-Peak
3
A
IB
Base Current-Continuous
0.75
A
IBM
Base Current-Peak
1.5
A
IE
Emitter Current-Continuous
2.25
A
IEM
Emitter Current-Peak
Collector Power Dissipation
PC
@ Tc-25'C
Tj
Junction Temperature
4.5
A
28
W
150
•c
Tstg
Storage Temperature Range
-65-150 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c ^{Thermal Resistance.Junction to Case}
4.5 •c/w
Rth j-a ^{Thermal Resistance.Junction to Ambient 100 'C/W}
•
i:
;
i
Li
123
•-<
3
PIN 1.BASE
2. COLLECTOR
3.a/HTTER
TO-126 package
«_{_B-.}
'4
fr ^r
'£?_'T - 1 ±—*~ -i~i
0
i
f_ni^{rH -}
-i ^{G ^~}
—•-] _CH-
A
-
V
K ~*
I
G
1 ?3
mm
DIM WIN MAX
A 10.70 10.90
B 7.70 7.90
C
2.60
1.8Q
n 0.66 O.S6
F 3.10 ³⁴⁰
G 443 4.68
H 2.00 2JO
J 1.35 1.55
K 16.10 16.30
O 3.70 3.90
R _{0.40 0.60}
V 1.17 1.37
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibilityFor any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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